Investigation of device transport characteristics enhancement of In_0.53Ga_0.47As MOSFET through <i>in situ</i> NH₃/N₂ remote-plasma treatment

In this work, we demonstrated considerable enhancement of the transport characteristics n-type Al2O3/In0.53Ga0.47As metal-oxide-semiconductor field-effect transistors (n-MOSFETs) with assistance in situ NH3/N2 remote-plasma (RP) treatment. According to measurement and simulation results, RP treated sample shows superior device performances as compared control without plasma treatment including (a) improved on-current (Ion) from 8.5 mA/mm 17 mA/mm, (b) transconductance (Gm) 16.05 mS/mm 28.52 mS/mm, (c) suppressed subthreshold swing 189 mV/dec 170 mV/dec, (d) drain induced barrier lowering 36 mV/V 28 mV/V, (e) intensified peak effective mobility (μeff) 1896 cm2 V−1 s−1 2956 s−1, (f) reduced acceptor-type density interface trap state (Dit,A) 44%. By using TCAD simulation, output performance is found be dramatically impacted by (especially acceptor-type) at Al2O3/InGaAs interface.